Simulation of Single Electron Transistor ...
URL: http://www.iji-cs.org/paperInfo.aspx?ID=2506
With respect to single-electron transistor (SET) technology, it is possible to build neural networks with extreme low power properties. To simulate SET circuits, an electrical model has been represented. In contrast to the prescriptions in the so-called Orthodox theory of single-electronics, this model explores the discrete character of the tunnel current and conditions. In this paper a brief description of neural circuitry based tree-island structure was given and verified as a single-electron memory SEM with a well known SET device simulator called SIMON.
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Additional Information
| Field | Value |
|---|---|
| Last updated | unknown |
| Created | unknown |
| Format | unknown |
| License | Other (Open) |
| Created | over 12 years ago |
| id | a8acc8b9-10b8-41f3-9fb4-e6dfd32f9c9e |
| package id | aa394166-18c8-4f9a-ab07-4ac9f92353a6 |
| position | 30 |
| resource type | file |
| revision id | dc591269-5aed-4234-880c-e4fa595b04b8 |
| state | active |
